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Brand Name : Infineon
Model Number : FM25CL64B-GTR
Certification : CE, GCF, ROHS
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, Western Union,
Supply Ability : 1000pcs per month
Delivery Time : 3-5 working days after received the payment
Packaging Details : Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Function : Step-Up, Step-Down
Output Configuration : Positive or Negative
Topology : Buck, Boost
Output Type : Adjustable
Number of Outputs : 1
FM25CL64B-GTR 64Kb Serial F-RAM with 20MHz SPI No-Delay Writes 10^14 Endurance 151-Year Data Retention 2.0-3.6V Operation -40anddeg;C to +85anddeg;C and Small SOIC Package
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Features
■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K andtimes; 8
andnbsp; ❐ High-endurance 100 trillion (1014) read/writes
andnbsp; ❐ 151-year data retention (See Data Retention and Endurance on page 12)
andnbsp; ❐ NoDelayandtrade; writes
andnbsp; ❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
andnbsp; ❐ Up to 20 MHz frequency
andnbsp; ❐ Direct hardware replacement for serial flash and EEPROM
andnbsp; ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
andnbsp; ❐ Hardware protection using the Write Protect (WP ) pin
andnbsp; ❐ Software protection using Write Disable instruction
andnbsp; ❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
andnbsp; ❐ 200 A active current at 1 MHz
andnbsp; ❐ 3 A (typ) standby current
■ Low-voltage operation: VDD = 2.7 V to 3.65 V
■ Industrial temperature: andndash;40 C to +85 C
■ Packages
andnbsp; ❐ 8-pin small outline integrated circuit (SOIC) package
andnbsp; ❐ 8-pin thin dual flat no leads (DFN) package
■ Restriction of hazardous substances (RoHS) compliant
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Applications
1. Industrial Automation andamp; Control Systems
Examples: PLCs (Programmable Logic Controllers), smart sensors, motor drives, industrial robots.
Why itand#39;s suitable: These systems need to continuously and rapidly log operational parameters, event logs, fault data, or production counts. The F-RAMand#39;s ultra-high endurance and fast, delay-free writes ensure critical data is saved completely even at the moment of power loss, preventing data loss due to write delays.
2. Automotive Electronics
Examples: Event Data Recorders (EDR) in ADAS, automotive black boxes, instrument clusters, body control modules.
Why itand#39;s suitable: Requires instant logging of large amounts of sensor data during an accident or sudden power loss. F-RAMand#39;s fast write characteristic is ideal. Its high endurance is also suitable for frequently updated data like mileage or door open/close counts.
3. Medical Equipment
Examples: Portable medical monitors (e.g., glucose meters, heart rate monitors), implantable devices, diagnostic equipment.
Why itand#39;s suitable: Devices need to reliably record patient data, usage logs, and calibration information. F-RAMand#39;s low power consumption and high reliability are crucial for data security and long-term stable operation.
4. Smart Metering andamp; Measurement Systems
Examples: Smart electricity meters, water meters, gas meters.
Why itand#39;s suitable: Requires updating cumulative usage data every few seconds and saving the final value instantly before power loss. Daily frequent writes are a significant challenge for EEPROM but are not an issue for F-RAM.
5. Data Loggers
Examples: Environmental monitoring (temperature, humidity, pressure loggers), GPS trackers.
Why itand#39;s suitable: These applications require continuous logging of data streams at high frequencies. F-RAMand#39;s high write speed and infinite endurance allow seamless data logging without the risk of data loss or bottlenecks caused by write delays inherent in EEPROM.
6. High-End Consumer Electronics
Examples: Professional audio equipment, smart home hubs, gaming peripherals.
Why itand#39;s suitable: When fast saving of user settings, game state, or real-time sensor data is needed, F-RAM provides a smoother and more reliable experience than EEPROM.
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Description
The FM25CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.
These capabilities make the FM25CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.
The FM25CL64B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The FM25CL64B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device specifications are guaranteed over an industrial temperature range of andndash;40 C to +85 C.
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INFORMATION
| Category | andnbsp; | |
| Mfr | andnbsp; | |
| Series | andnbsp; | |
| Packaging | Tape andamp; Reel (TR) Cut Tape (CT) Digi-Reelandreg; | andnbsp; andnbsp; andnbsp; |
| Part Status | Active | andnbsp; |
| DigiKey Programmable | Not Verified | andnbsp; |
| Memory Type | Non-Volatile | andnbsp; |
| Memory Format | andnbsp; | |
| Technology | FRAM (Ferroelectric RAM) | andnbsp; |
| Memory Size | andnbsp; | |
| Memory Organization | 8K x 8 | andnbsp; |
| Memory Interface | SPI | andnbsp; |
| Clock Frequency | 20 MHz | andnbsp; |
| Write Cycle Time - Word, Page | - | andnbsp; |
| Voltage - Supply | 2.7V ~ 3.65V | andnbsp; |
| Operating Temperature | -40anddeg;C ~ 85anddeg;C (TA) | andnbsp; |
| Mounting Type | Surface Mount | andnbsp; |
| Package / Case | andnbsp; | |
| Supplier Device Package | 8-SOIC | andnbsp; |
| Base Product Number |
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Drawing

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FM25CL64B-GTR 64Kb Serial F-RAM with 20MHz SPI No-Delay Writes 10^14 Endurance 151-Year Data Retention 2.0-3.6V Operation -40°C to +85°C and Small Images |